MB85R256FPF-G-BND-ERE1

制造商 :

Fujitsu Electronics America, Inc.

产品分类 :

记忆

Access Time :

150 ns

Clock Frequency :

-

Memory Format :

FRAM

Memory Interface :

Parallel

Memory Size :

256Kb (32K x 8)

Memory Type :

Non-Volatile

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 85°C (TA)

Product Status :

Obsolete

Supplier Device Package :

28-SOP

Technology :

FRAM (Ferroelectric RAM)

Voltage - Supply :

2.7V ~ 3.6V

Write Cycle Time - Word, Page :

150ns