2SK879-Y(TE85L,F)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - JFET

Current - Drain (Idss) @ Vds (Vgs=0) :

1.2 mA @ 10 V

Current Drain (Id) - Max :

-

Drain to Source Voltage (Vdss) :

-

FET Type :

N-Channel

Input Capacitance (Ciss) (Max) @ Vds :

8.2pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

125°C (TJ)

Package / Case :

SC-70, SOT-323

Power - Max :

100 mW

Product Status :

Active

Resistance - RDS(On) :

-

Supplier Device Package :

USM

Voltage - Breakdown (V(BR)GSS) :

-

Voltage - Cutoff (VGS off) @ Id :

400 mV @ 100 nA