GPA030A135MN-FDR

制造商 :

SemiQ

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

60 A

Current - Collector Pulsed (Icm) :

90 A

Gate Charge :

300 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

329 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

450 ns

Supplier Device Package :

TO-3PN

Switching Energy :

4.4mJ (on), 1.18mJ (off)

Td (on/off) @ 25°C :

30ns/145ns

Test Condition :

600V, 30A, 5Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 30A

Voltage - Collector Emitter Breakdown (Max) :

1350 V