GT10G131(TE12L,Q)

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

-

Current - Collector Pulsed (Icm) :

200 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Power - Max :

1 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Supplier Device Package :

8-SOP (5.5x6.0)

Switching Energy :

-

Td (on/off) @ 25°C :

3.1µs/2µs

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

2.3V @ 4V, 200A

Voltage - Collector Emitter Breakdown (Max) :

400 V