GT40WR21,Q

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

40 A

Current - Collector Pulsed (Icm) :

80 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

375 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-3P(N)

Switching Energy :

-

Td (on/off) @ 25°C :

-

Test Condition :

-

Vce(on) (Max) @ Vge, Ic :

5.9V @ 15V, 40A

Voltage - Collector Emitter Breakdown (Max) :

1350 V