GT40QR21(STA1,E,D

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

40 A

Current - Collector Pulsed (Icm) :

80 A

Gate Charge :

-

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

175°C (TJ)

Package / Case :

TO-3P-3, SC-65-3

Power - Max :

230 W

Product Status :

Active

Reverse Recovery Time (trr) :

600 ns

Supplier Device Package :

TO-3P(N)

Switching Energy :

-, 290µJ (off)

Td (on/off) @ 25°C :

-

Test Condition :

280V, 40A, 10Ohm, 20V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 40A

Voltage - Collector Emitter Breakdown (Max) :

1200 V