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RGW80TS65GC11
- 制造商 :
- ROHM Semiconductor
- 产品分类 :
- 晶体管 - IGBT - 单
- Current - Collector (Ic) (Max) :
- 78 A
- Current - Collector Pulsed (Icm) :
- 160 A
- Gate Charge :
- 110 nC
- IGBT Type :
- Trench Field Stop
- Input Type :
- Standard
- Mounting Type :
- Through Hole
- Operating Temperature :
- -40°C ~ 175°C (TJ)
- Package / Case :
- TO-247-3
- Power - Max :
- 214 W
- Product Status :
- Active
- Reverse Recovery Time (trr) :
- -
- Supplier Device Package :
- TO-247N
- Switching Energy :
- 760µJ (on), 720µJ (off)
- Td (on/off) @ 25°C :
- 44ns/143ns
- Test Condition :
- 400V, 40A, 10Ohm, 15V
- Vce(on) (Max) @ Vge, Ic :
- 1.9V @ 15V, 40A
- Voltage - Collector Emitter Breakdown (Max) :
- 650 V
- 数据列表
- RGW80TS65GC11