RGT16NS65DGC9

制造商 :

ROHM Semiconductor

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

16 A

Current - Collector Pulsed (Icm) :

24 A

Gate Charge :

21 nC

IGBT Type :

Trench Field Stop

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power - Max :

94 W

Product Status :

Active

Reverse Recovery Time (trr) :

42 ns

Supplier Device Package :

TO-262

Switching Energy :

-

Td (on/off) @ 25°C :

13ns/33ns

Test Condition :

400V, 8A, 10Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.1V @ 15V, 8A

Voltage - Collector Emitter Breakdown (Max) :

650 V