HGT1S2N120CN

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

13 A

Current - Collector Pulsed (Icm) :

20 A

Gate Charge :

30 nC

IGBT Type :

NPT

Input Type :

Standard

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-262-3 Long Leads, I²Pak, TO-262AA

Power - Max :

104 W

Product Status :

Obsolete

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-262

Switching Energy :

96µJ (on), 355µJ (off)

Td (on/off) @ 25°C :

25ns/205ns

Test Condition :

960V, 2.6A, 51Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.4V @ 15V, 2.6A

Voltage - Collector Emitter Breakdown (Max) :

1200 V