HGTD3N60A4S

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - IGBT - 单

Current - Collector (Ic) (Max) :

17 A

Current - Collector Pulsed (Icm) :

40 A

Gate Charge :

32 nC

IGBT Type :

-

Input Type :

Standard

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-252-3, DPak (2 Leads + Tab), SC-63

Power - Max :

70 W

Product Status :

Active

Reverse Recovery Time (trr) :

-

Supplier Device Package :

TO-252-3 (DPAK)

Switching Energy :

-

Td (on/off) @ 25°C :

6ns/73ns

Test Condition :

390V, 3A, 50Ohm, 15V

Vce(on) (Max) @ Vge, Ic :

2.7V @ 15V, 3A

Voltage - Collector Emitter Breakdown (Max) :

600 V