TPH3206LDB

制造商 :

Transphorm

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

16A (Tc)

Drain to Source Voltage (Vdss) :

650 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.2 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

720 pF @ 480 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-PowerDFN

Power Dissipation (Max) :

81W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

180mOhm @ 10A, 8V

Supplier Device Package :

PQFN (8x8)

Technology :

GaNFET (Gallium Nitride)

Vgs (Max) :

±18V

Vgs(th) (Max) @ Id :

2.6V @ 500µA