2SJ529L06-E

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

10A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

580 pF @ 10 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-251-3 Long Leads, IPak, TO-251AB

Power Dissipation (Max) :

20W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

160mOhm @ 5A, 10V

Supplier Device Package :

DPAK(L)-(2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA