2SK4150TZ-E

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

400mA (Ta)

Drain to Source Voltage (Vdss) :

250 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.7 nC @ 4 V

Input Capacitance (Ciss) (Max) @ Vds :

80 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

150°C

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation (Max) :

750mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

5.7Ohm @ 200mA, 4V

Supplier Device Package :

TO-92

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1.5V @ 1mA