2SK2857-T1-AZ

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

4A (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

10.6 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

265 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

TO-243AA

Power Dissipation (Max) :

2W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

150mOhm @ 2.5A, 10V

Supplier Device Package :

SC-62

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 1mA