HAT1091C-EL-E

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.6 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

200 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-SMD, Flat Leads

Power Dissipation (Max) :

830mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

175mOhm @ 800mA, 4.5V

Supplier Device Package :

6-CMFPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1.4V @ 1mA