G2012

制造商 :

Goford Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

12A (Tc)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

2.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

29 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

1255 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-WDFN Exposed Pad

Power Dissipation (Max) :

1.5W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

12mOhm @ 5A, 4.5V

Supplier Device Package :

6-DFN (2x2)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±10V

Vgs(th) (Max) @ Id :

1V @ 250µA