2SK1958-T1-A

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

16 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

10 pF @ 3 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Power Dissipation (Max) :

150mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

12Ohm @ 10mA, 4V

Supplier Device Package :

8-MMPAK

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±7V

Vgs(th) (Max) @ Id :

1.1V @ 10µA