2N6661

制造商 :

Solid State Inc.

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

900mA (Tc)

Drain to Source Voltage (Vdss) :

90 V

Drive Voltage (Max Rds On, Min Rds On) :

5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

50 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-205AD, TO-39-3 Metal Can

Power Dissipation (Max) :

6.25W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4mOhm @ 1A, 10V

Supplier Device Package :

TO-39

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±40V

Vgs(th) (Max) @ Id :

2V @ 1mA