IRFD9113

制造商 :

Harris Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

600mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

15 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

1.6Ohm @ 300mA, 10V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-

Vgs(th) (Max) @ Id :

-