IRFD110

制造商 :

Harris Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.3 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

180 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Power Dissipation (Max) :

1.3W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

540mOhm @ 600mA, 10V

Supplier Device Package :

4-DIP, Hexdip, HVMDIP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

4V @ 250µA