PMN45EN,135

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

5.2A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

6.1 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

495 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SC-74, SOT-457

Power Dissipation (Max) :

1.75W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

40mOhm @ 3A, 10V

Supplier Device Package :

6-TSOP

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

20V

Vgs(th) (Max) @ Id :

2V @ 1mA