FDN372S

制造商 :

Fairchild Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2.6A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

8.1 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

630 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

40mOhm @ 2.6A, 10V

Supplier Device Package :

SOT-23-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±16V

Vgs(th) (Max) @ Id :

3V @ 1mA