PMZB790SN,315

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

650mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

4.5V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.37 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

35 pF @ 30 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-101, SOT-883

Power Dissipation (Max) :

360mW (Ta), 2.7W (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

940mOhm @ 300mA, 10V

Supplier Device Package :

DFN1006B-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3V @ 250µA