NX3008PBKMB,315

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

300mA (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

-

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.72 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

46 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SC-101, SOT-883

Power Dissipation (Max) :

360mW (Ta), 2.7W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.1Ohm @ 200mA, 4.5V

Supplier Device Package :

DFN1006B-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±8V

Vgs(th) (Max) @ Id :

1.1V @ 250µA