DN2535N3-G

制造商 :

Microchip Technology

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

120mA (Tj)

Drain to Source Voltage (Vdss) :

350 V

Drive Voltage (Max Rds On, Min Rds On) :

0V

FET Feature :

Depletion Mode

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

300 pF @ 25 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-226-3, TO-92-3 (TO-226AA)

Power Dissipation (Max) :

1W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

25Ohm @ 120mA, 0V

Supplier Device Package :

TO-92 (TO-226)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

-