CSD23202W10

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2.2A (Ta)

Drain to Source Voltage (Vdss) :

12 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

3.8 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

512 pF @ 6 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

4-UFBGA, DSBGA

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

53mOhm @ 500mA, 4.5V

Supplier Device Package :

4-DSBGA (1x1)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-6V

Vgs(th) (Max) @ Id :

900mV @ 250µA