G2R120MT33J

制造商 :

GeneSiC Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

35A

Drain to Source Voltage (Vdss) :

3300 V

Drive Voltage (Max Rds On, Min Rds On) :

20V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

145 nC @ 20 V

Input Capacitance (Ciss) (Max) @ Vds :

3706 pF @ 1000 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-263-8, D²Pak (7 Leads + Tab), TO-263CA

Power Dissipation (Max) :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

156mOhm @ 20A, 20V

Supplier Device Package :

TO-263-7

Technology :

SiCFET (Silicon Carbide)

Vgs (Max) :

+25V, -10V

Vgs(th) (Max) @ Id :

-