UJ3C120080K3S

制造商 :

UnitedSiC

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

33A (Tc)

Drain to Source Voltage (Vdss) :

1200 V

Drive Voltage (Max Rds On, Min Rds On) :

12V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

51 nC @ 15 V

Input Capacitance (Ciss) (Max) @ Vds :

1500 pF @ 100 V

Mounting Type :

Through Hole

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

TO-247-3

Power Dissipation (Max) :

254.2W (Tc)

Product Status :

Not For New Designs

Rds On (Max) @ Id, Vgs :

100mOhm @ 20A, 12V

Supplier Device Package :

TO-247-3

Technology :

SiCFET (Cascode SiCJFET)

Vgs (Max) :

±25V

Vgs(th) (Max) @ Id :

6V @ 10mA