CSD19532Q5BT

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

100A (Ta)

Drain to Source Voltage (Vdss) :

100 V

Drive Voltage (Max Rds On, Min Rds On) :

6V, 10V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

62 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

4810 pF @ 50 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

8-PowerTDFN

Power Dissipation (Max) :

3.1W (Ta), 195W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

4.9mOhm @ 17A, 10V

Supplier Device Package :

8-VSON-CLIP (5x6)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

3.2V @ 250µA