CSD25481F4T

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

20 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4.5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.91 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

189 pF @ 10 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-XFDFN

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

88mOhm @ 500mA, 8V

Supplier Device Package :

3-PICOSTAR

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

-12V

Vgs(th) (Max) @ Id :

1.2V @ 250µA