BSP250,115

制造商 :

Nexperia

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3A (Tc)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

10V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

25 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

250 pF @ 20 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

TO-261-4, TO-261AA

Power Dissipation (Max) :

1.65W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

250mOhm @ 1A, 10V

Supplier Device Package :

SOT-223

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2.8V @ 1mA