SI1050X-T1-GE3

制造商 :

Vishay

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

1.34A (Ta)

Drain to Source Voltage (Vdss) :

8 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4.5V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

11.6 nC @ 5 V

Input Capacitance (Ciss) (Max) @ Vds :

585 pF @ 4 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-563, SOT-666

Power Dissipation (Max) :

236mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

86mOhm @ 1.34A, 4.5V

Supplier Device Package :

SC-89 (SOT-563F)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±5V

Vgs(th) (Max) @ Id :

900mV @ 250µA