SSM3K329R,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

3.5A (Ta)

Drain to Source Voltage (Vdss) :

30 V

Drive Voltage (Max Rds On, Min Rds On) :

1.8V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

1.5 nC @ 4 V

Input Capacitance (Ciss) (Max) @ Vds :

123 pF @ 15 V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

SOT-23-3 Flat Leads

Power Dissipation (Max) :

1W (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

126mOhm @ 1A, 4V

Supplier Device Package :

SOT-23F

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±12V

Vgs(th) (Max) @ Id :

1V @ 1mA