BVSS84LT1G

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

130mA (Ta)

Drain to Source Voltage (Vdss) :

50 V

Drive Voltage (Max Rds On, Min Rds On) :

5V

FET Feature :

-

FET Type :

P-Channel

Gate Charge (Qg) (Max) @ Vgs :

2.2 nC @ 10 V

Input Capacitance (Ciss) (Max) @ Vds :

36 pF @ 5 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

TO-236-3, SC-59, SOT-23-3

Power Dissipation (Max) :

225mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10Ohm @ 100mA, 5V

Supplier Device Package :

SOT-23-3 (TO-236)

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

2V @ 250µA