DMN62D1LFB-7B

制造商 :

Diodes Incorporated

产品分类 :

晶体管 - FET、MOSFET - 单

Current - Continuous Drain (Id) @ 25°C :

320mA (Ta)

Drain to Source Voltage (Vdss) :

60 V

Drive Voltage (Max Rds On, Min Rds On) :

1.5V, 4V

FET Feature :

-

FET Type :

N-Channel

Gate Charge (Qg) (Max) @ Vgs :

0.9 nC @ 4.5 V

Input Capacitance (Ciss) (Max) @ Vds :

64 pF @ 25 V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

3-UFDFN

Power Dissipation (Max) :

500mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

2Ohm @ 100mA, 4V

Supplier Device Package :

X1-DFN1006-3

Technology :

MOSFET (Metal Oxide)

Vgs (Max) :

±20V

Vgs(th) (Max) @ Id :

1V @ 250µA