APTM100TDU35PG

制造商 :

Microsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

22A

Drain to Source Voltage (Vdss) :

1000V (1kV)

FET Feature :

Standard

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

186nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

5200pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP6

Power - Max :

390W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

420mOhm @ 11A, 10V

Supplier Device Package :

SP6-P

Vgs(th) (Max) @ Id :

5V @ 2.5mA