APTM100A23SCTG

制造商 :

Microsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

36A

Drain to Source Voltage (Vdss) :

1000V (1kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Half Bridge)

Gate Charge (Qg) (Max) @ Vgs :

308nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

8700pF @ 25V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

SP4

Power - Max :

694W

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

270mOhm @ 18A, 10V

Supplier Device Package :

SP4

Vgs(th) (Max) @ Id :

5V @ 5mA