PMDPB85UPE,115

制造商 :

NXP Semiconductors

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.9A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

8.1nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

514pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

6-UFDFN Exposed Pad

Power - Max :

515mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

103mOhm @ 1.3A, 4.5V

Supplier Device Package :

6-HUSON (2x2)

Vgs(th) (Max) @ Id :

950mV @ 250µA