SSM6L61NU,LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

4A

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-

Package / Case :

6-WDFN Exposed Pad

Power - Max :

-

Product Status :

Active

Rds On (Max) @ Id, Vgs :

-

Supplier Device Package :

6-UDFN (2x2)

Vgs(th) (Max) @ Id :

-