SSM6N16FE,L3F

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

100mA (Ta)

Drain to Source Voltage (Vdss) :

20V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

9.3pF @ 3V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

SOT-563, SOT-666

Power - Max :

150mW (Ta)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3Ohm @ 10mA, 4V

Supplier Device Package :

ES6

Vgs(th) (Max) @ Id :

1.1V @ 100µA