SSM6L09FUTE85LF

制造商 :

Toshiba Electronic Devices and Storage Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

400mA, 200mA

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

-

Input Capacitance (Ciss) (Max) @ Vds :

20pF @ 5V

Mounting Type :

Surface Mount

Operating Temperature :

150°C (TJ)

Package / Case :

6-TSSOP, SC-88, SOT-363

Power - Max :

300mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

700mOhm @ 200MA, 10V

Supplier Device Package :

US6

Vgs(th) (Max) @ Id :

1.8V @ 100µA