MSCSM120TAM11CTPAG

制造商 :

Microchip Technology

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

251A (Tc)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

6 N-Channel (3-Phase Bridge)

Gate Charge (Qg) (Max) @ Vgs :

696nC @ 20V

Input Capacitance (Ciss) (Max) @ Vds :

9060pF @ 1000V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 175°C (TJ)

Package / Case :

Module

Power - Max :

1.042kW (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

10.4mOhm @ 120A, 20V

Supplier Device Package :

SP6-P

Vgs(th) (Max) @ Id :

2.8V @ 3mA