FF6MR12W2M1PB11BPSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

200A (Tj)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

496nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

14700pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

20mW (Tc)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

5.63mOhm @ 200A, 15V

Supplier Device Package :

-

Vgs(th) (Max) @ Id :

5.55V @ 80mA