BSG0810NDIATMA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

19A, 39A

Drain to Source Voltage (Vdss) :

25V

FET Feature :

Logic Level Gate, 4.5V Drive

FET Type :

2 N-Channel (Dual) Asymmetrical

Gate Charge (Qg) (Max) @ Vgs :

8.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

1040pF @ 12V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 155°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

2.5W

Product Status :

Active

Rds On (Max) @ Id, Vgs :

3mOhm @ 20A, 10V

Supplier Device Package :

PG-TISON-8

Vgs(th) (Max) @ Id :

2V @ 250µA