FDC6561AN-NB5S007A

制造商 :

onsemi

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2.5A (Ta)

Drain to Source Voltage (Vdss) :

30V

FET Feature :

Logic Level Gate

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

3.2nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds :

220pF @ 15V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

SOT-23-6 Thin, TSOT-23-6

Power - Max :

700mW (Ta)

Product Status :

Last Time Buy

Rds On (Max) @ Id, Vgs :

95mOhm @ 2.5A, 10V

Supplier Device Package :

SuperSOT™-6

Vgs(th) (Max) @ Id :

3V @ 250µA