RQM2201DNS#P0

制造商 :

Renesas Electronics Corporation

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

2A (Ta)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

2.4nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds :

200pF @ 10V

Mounting Type :

Surface Mount

Operating Temperature :

150°C

Package / Case :

6-WDFN Exposed Pad

Power - Max :

1.5W (Ta)

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

225mOhm @ 1A, 4.5V

Supplier Device Package :

6-HWSON (3x3)

Vgs(th) (Max) @ Id :

1.4V @ 1mA