G05NP06S2

制造商 :

Goford Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

5A (Tc), 3.1A (Tc)

Drain to Source Voltage (Vdss) :

60V

FET Feature :

-

FET Type :

N and P-Channel

Gate Charge (Qg) (Max) @ Vgs :

22nC @ 10V, 37nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1336pF @ 30V, 1454pF @ 30V

Mounting Type :

Surface Mount

Operating Temperature :

-55°C ~ 150°C (TJ)

Package / Case :

-

Power - Max :

2.5W (Tc), 1.9W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

40mOhm @ 3.9A, 5V, 95mOhm @ 200mA, 4.5V

Supplier Device Package :

8-SOP

Vgs(th) (Max) @ Id :

2V @ 250µA, 2.2V @ 250µA