DF23MR12W1M1B11BPSA1

制造商 :

Infineon Technologies

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

25A (Tj)

Drain to Source Voltage (Vdss) :

1200V (1.2kV)

FET Feature :

Silicon Carbide (SiC)

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

62nC @ 15V

Input Capacitance (Ciss) (Max) @ Vds :

1840pF @ 800V

Mounting Type :

Chassis Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Package / Case :

Module

Power - Max :

20mW

Product Status :

Obsolete

Rds On (Max) @ Id, Vgs :

45mOhm @ 25A, 15V (Typ)

Supplier Device Package :

AG-EASY1BM-2

Vgs(th) (Max) @ Id :

5.55V @ 10mA