TQM150NB04DCR RLG

制造商 :

Taiwan Semiconductor

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

9A (Ta), 39A (Tc)

Drain to Source Voltage (Vdss) :

40V

FET Feature :

Standard

FET Type :

2 N-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

18nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

1135pF @ 20V

Mounting Type :

Surface Mount, Wettable Flank

Operating Temperature :

-55°C ~ 175°C (TJ)

Package / Case :

8-PowerTDFN

Power - Max :

2.4W (Ta), 48W (Tc)

Product Status :

Active

Rds On (Max) @ Id, Vgs :

15mOhm @ 9A, 10V

Supplier Device Package :

8-PDFNU (5x6)

Vgs(th) (Max) @ Id :

4V @ 250µA