TPS1120DR

制造商 :

Texas Instruments

产品分类 :

晶体管 - FET、MOSFET - 阵列

Current - Continuous Drain (Id) @ 25°C :

1.17A

Drain to Source Voltage (Vdss) :

15V

FET Feature :

Logic Level Gate

FET Type :

2 P-Channel (Dual)

Gate Charge (Qg) (Max) @ Vgs :

5.45nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds :

-

Mounting Type :

Surface Mount

Operating Temperature :

-40°C ~ 150°C (TJ)

Power - Max :

840mW

Product Status :

Active

Rds On (Max) @ Id, Vgs :

180mOhm @ 1.5A, 10V

Supplier Device Package :

8-SOIC

Vgs(th) (Max) @ Id :

1.5V @ 250µA